Month: October 2022

What is Reactive Sputtering Coating Technology?

At present, reactive sputtering deposition is a well-established sputter coating technology and is widely used for industrial coating deposition to produce thin layers for high-added value products, such as flat panel displays, solar cells, optical components, and decorative finishes.

Definition

In the process of reactive sputtering, a target material is sputtered in the presence of a gas or a mixture of gasses that will react with the target material to prepare a compound film of a predetermined chemical ratio. Reactive sputtering is most often practiced using one or more magnetron sputtering cathodes. Therefore, it is also called reactive magnetron sputtering.

Sputtering Target

Sputtering targets can be divided into metal targets, alloy targets, ceramic targets, etc. Metal sputtering targets can be used to produce compound materials. For example, a titanium sputtering target can be used to produce coatings such as TiO2, TiN, and Ti-O-N. Apart from it, titanium targets can also be used to produce any of the aforementioned different compositions as well as boride and carbide films. Compared with the compound target, the metal target has the advantage of longer service life.

Reactive gases

In most cases, Argon is the main gas used in reactive sputtering as well as other sputter coating methods. It has to be mentioned that the amount of a reactive gas introduced into a process chamber should be strictly controlled in order to either achieve a certain amount of doping or to produce a fully reacted compound. Here is a list of other gasses used in reactive sputtering).

Gasses Uses
Oxygen (O2) deposition of oxide films (e.g. Al2O3, SiO2, TiO2, HfO2, ZrO2, Nb2O5, AZO, ITO)
Nitrogen (N2) deposition of nitride films (e.g. TiN, ZrN, CrN, AlN, Si3N4, AlCrN, TiAlN)
Carbon dioxide (CO2) deposition of oxide coatings
Acetylene (C2H2) deposition of metal-DLC, hydrogenated carbide, carbo-nitride films
Methane (CH4) similar applications as for C2H2

Several reactive gasses can be mixed in order to deposit a multi-component functional thin film. Additional reactive gas is sometimes used to enhance a certain deposition process (e.g. addition of N2 in the SiO2 reactive sputtering process).

Application

Coatings and films produced by Reactive Magnetron Sputtering can be used in a large variety of products such as OLED devices, optical antireflective coatings, and decorative coatings.

 Please visit https://www.sputtertargets.net/ for information.

Determining Factors For Fillm Uniformity

Sputtering targets are materials that are indispensable during the sputtering process in the coating industry. Uniformity is an indicator used to value the quality of the coated film. Usually, there are two factors that determine the coating uniformity: the length of the targets and the distance between the target and the substrate.

factors that determine the coating uniformity

Length of the sputtering targets

The length of the target is an important factor in producing a coating with good uniformity, because it decides which construction method to be used. It’s better you consider the length of certain monolithic targets during the process requirements planning phase in order to achieve good uniformity.

Suitable target length depends on the orientation of the sputtering target materials and how much weight the target flanges can support without plastically deforming or breaking which can occur for brittle materials. For example, ceramic targets are usually brittle and usually need to be bonded with a backing tube, so the length of ceramic targets cannot be too long, otherwise, they will easily break into pieces. In addition, people usually joined small ceramic targets together to produce the large-area ceramic thin film in the case.

Distance between the target and Substrate

The other factor to define the achievable uniformity of the obtained film is the distance between the sputtering target and the substrate. The larger the distance is, the poorer the uniformity is achieved on the substrate. To be noted, the distance is not stable during the process: it keeps increasing as the target materials keep being consumed and eroding. Therefore, generally speaking, the density of the coating is not uniform, and the worst process uniformity occurs when the sputtering ends.

In general, the distance between the target and the substrate is measured before the start of sputtering, so that the uniformity we calculated is theoretically the best, or the most achievable. But in fact, at the end of the sputtering, the initial uniformity specification could not be reached due to the increase in the distance. The specific difference depends on the initial target thickness.

What Will Affect The Magnetron Sputtering Voltage?

Magnetic field

Magnetic field influences inversely the sputtering voltage. In other words, when the magnetic field on the surface of the sputtering target increases, the operating voltage of magnetron sputtering will decrease. It happens because the sputter-etched surface of the target gets closer to the strong magnetic field of the permanent magnet behind the target. To be noted, when the magnetic field strength increases above 0.1T, its effect on the sputtering voltage is no longer obvious.

In order to reduce the influence of this factor, the thickness of the sputtered material is not arbitrary, but limited. In general, thicker non-magnetic targets can be used in stronger magnetic fields.

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Material Type

Different target materials also affect the sputtering voltage. Here are examples of ITO, copper, aluminum, titanium, manganese, and chromium target.

Sputtering Target Sputtering Voltage
Indium Tin Oxide (ITO) ≈200V
Copper (Cu)
Aluminum (Al)
Titanium (Ti)		 400~600V
Manganese (Mn)
Chromium (Cr)		 >700V

Gas Pressure

Working gas pressure

Under the condition that various parameters (such as environmental conditions, power control panel parameters, etc.) remain unchanged, the increase of the working gas pressure will reduce the magnetic sputtering voltage.

Reactive gas pressure

On contrary, under the determined environment and constant power source, the increase of reactive gas pressure will result in the increase of magnetic sputtering voltage.

Distance Between Cathode & Anode

magnetron sputtering11-9

The distance between the cathode and anode in vacuum gas discharge can have a certain effect on the sputtering voltage. If the distance is too large, the internal resistance of the equivalent gas discharge is mainly determined by the plasma equivalent internal resistance. Conversely, if the distance is too small, the internal resistance of the plasma discharge will be small.

When the magnetron target ignited and enters the normal sputtering, if the distance between the cathode and anode is too small, although the sputtering current has reached the process setting value, the target sputtering voltage is still low.

Please visit https://www.sputtertargets.net/ for more information.