4 Types of Wet Cleaning Method of Silicon Wafer

After the silicon wafer is processed by different processes such as slicing, chamfering, grinding, surface treatment, polishing, and epitaxy, the surface has been seriously stained. The purpose of cleaning is to remove particles, metal ions and organic substances on the surface of the silicon wafer.

Wet cleaning uses chemical solvents with strong corrosive and oxidizing properties, such as H2SO4, H2O2, DHF, NH3•H2O, etc. The impurity particles on the surface of the silicon wafer react with the solvent to form soluble substances and gases. In order to improve the cleaning effect, it is possible to use mega-acoustic, heating, vacuum and other technical means, and finally use ultra-pure water to clean the surface of the silicon wafer to obtain a silicon wafer that meets the cleanliness requirements.

There are several methods for wet cleaning:

RCA cleaning

Kern et al. proposed the RCA cleaning method in 1965. According to the SPM, DHF, SC-1, and SC-2 sequences, the RCA cleaning method basically satisfies the requirements of most wafer cleanliness. Cleaning the silicon wafer by this method not only improves the cleaning efficiency, reduces the cost, saves time, obtains excellent surface cleanliness, but also improves the electrochemical performance of the silicon wafer.

Ultrasonic cleaning

Ultrasonic cleaning is a cleaning method widely used in the semiconductor industry. The method has the advantages of good cleaning effect, simple operation, and can be removed for complicated devices and containers; but the method also has the disadvantages of high noise and easy breakage of the transducer.

This method can effectively remove organic, particulate, and metal ion impurities on the surface of the silicon wafer by utilizing the mechanical action of high-frequency sound waves, the cavitation effect of the solution, and the complexation reaction of chemical reagents. Using a similar method, BongKyun et al. used a 0.83 MHz megasonic wave to clean the silicon wafer, which is more excellent and can remove particulate impurities below 0.3 μm.

silicon wafer wet cleaning

Double flow spray

The dual-flow atomizing nozzle cleans the silicon wafer by using a nozzle to scan the silicon wafer back and forth with the rotating arm, and the silicon wafer rotates clockwise. The dual-flow nozzle uses a high-pressure, high-speed jet of gas to impinge a vulgar flow of liquid, destroying the surface tension of the liquid and the van der Waals bond and hydrogen bond between the liquid molecules, causing the liquid to atomize and become nanometer-sized droplets, which are ejected at high speed through the nozzle under the action of high pressure air.

Ozone microbubble method

The high activity and strong oxidizing properties of ozone can remove organic and particulate impurities on the surface of the silicon wafer. Ozone is dissolved in water to form a highly reactive OH group, and the OH group chemically reacts with the organic substance to remove organic impurities on the surface of the silicon wafer. At the same time, the surface of the silicon product is covered with an atomic-level smooth oxide film, which effectively isolates the re-adsorption of impurities.

This method has excellent cleaning effect, basically removes organic and particulate impurities, and meets the requirements of general silicon wafer cleanliness. At the same time, ozone microbubble cleaning produces less polluting waste and high cleaning efficiency, and can be used for cleaning large-scale circuits, silicon wafers and LEDs.

For more information, please visit https://www.sputtertargets.net/.

Sputter Targets for the Chip Industry

Every era has some materials to follow the mainstream trend to become the leader in the industry. Under the current situation, the development of the chip industry as a high-tech commanding point has important strategic significance, and the sputter target is a necessary raw material for the manufacture of ultra-large-scale integrated circuits. Therefore, the sputtering target material may be representative of the material emerging from this mainstream trend.

In the chip industry, which is a high-tech high point, sputter targets are essential raw materials for the manufacture of very large scale integrated circuits. Very large scale integrated circuits are those with more than 100,000 components integrated on a single chip, or more than 10,000 gates. With this technology, an electronic subsystem and even the entire electronic system can be “integrated” on one chip to complete various functions such as information collection, processing, and storage. What is repeatedly used in the manufacturing process of ultra-large-scale integrated circuits is the sputtering process belonging to physical vapor deposition (PVD) technology, which is also one of the main techniques for preparing electronic thin film materials.

The principle of the sputtering process is to utilize the ions generated by the ion source to accelerate the polymerization into a high-speed ion current in a vacuum to bombard the solid surface, and the kinetic energy exchange between the ions on the surface of the ion and the solid surface causes the atoms on the solid surface to leave the target and deposit on the substrate to form a nano/micro film.

The bombarded solid is the sputtering target, which is simply like a printing mold. The quality of the target plays a crucial role in the performance of the film, which directly determines the quality and performance of downstream semiconductor chips, flat panel displays, solar cells and other electronic devices or optical components. Therefore, the sputter target is the key raw material in the whole process.

sputter target-11-12

Sputtering targets can be classified according to their chemical composition, geometry and field of application. Targets with different compositions (aluminum, copper, stainless steel, titanium, nickel targets, etc.) can be divided into different film systems (superhard, wear-resistant, anti-corrosion alloy films, etc.); if divided according to their application fields, they can be divided into It is recording medium targets, semiconductor targets, display film targets, superconducting targets, and optical targets.

The target production process includes two processes of “material purification” and “target preparation”. During the purification process, it is necessary to ensure the reduction of impurity content in the target, and the preparation process needs to ensure the surface level of the sputter coater target.

Sputtering targets for high-end applications have very high technical thresholds and are very complex to prepare. First of all, it is necessary to carry out process design according to performance requirements, and then carry out repeated plastic deformation, heat treatment, precise control of grain, crystal orientation and other indicators, and then through welding, machining, cleaning and drying, vacuum packaging and other processes.

For more information, please visit https://www.sputtertargets.net/.

What are the Uses of Metal Sputtering Targets?

What is the “target”?

The target refers to the target material. They can be used in high-energy laser weapons; different power densities, different output waveforms, and different wavelengths of lasers can have different killing effects when interacting with different targets. Another major use for them is for sputtering in physical film coating.

What is the “sputtering target”?

Magnetron sputtering coating is a new type of physical vapor deposition method, and its advantages in many aspects are quite obvious compared with the earlier evaporation coating method. As a relatively mature technology that has been developed, magnetron sputtering has been applied in many fields. Sputtering targets serve as source materials in magnetron sputtering coatings.

sputtering target in lcd

What are the application areas?

1: Microelectronics field

2: Target for flat panel display

3: Targets for storage technology

Sputtering materials are mainly used in electronics and information industries, such as integrated circuits, information storage, liquid crystal displays, laser memories, electronic control devices, etc.; they can also be used in the field of glass coating; they can also be applied to wear-resistant materials, high temperature corrosion resistance, high-grade decorative products and other industries.

The technological development trend of target materials is closely related to the development trend of thin-film technology in the downstream application industry. As technology in the application industry improves on film products or components, target technology should also change. In recent years, flat panel displays (FPDs) have largely replaced the market for computer monitors and televisions, which are mainly cathode ray tubes (CRTs), and will greatly increase the technical and market demand for ITO targets.

Stanford Advanced Materials (SAM) Corporation is a global supplier of various sputtering targets such as metals, alloys, oxides, ceramic materials. For more information, please visit https://www.sputtertargets.net/.

Introduction to Aluminum, Aluminum Alloy and Aluminum Sputtering Target

Aluminum is a light metal with low density (2.79/cm3), good strength and excellent plasticity. As for aluminum alloy, the strength of super-hard aluminum alloy can reach 600Mpa, and the tensile strength of ordinary hard aluminum alloy can reach 200-450Mpa, which is much higher than steel in steel. Therefore, aluminum and aluminum alloy are widely used in machinery manufacturing.

The conductivity of aluminum is second only to silver and copper, so aluminum is used in the manufacture of various conductors. Aluminum also has a good thermal conductivity that can be used as a variety of heat dissipating materials. Besides, aluminum has good corrosion resistance and excellent plasticity, and is suitable for various pressure processing.

Aluminum alloy

Aluminum alloy can be divided into the deformed aluminum alloy and the cast aluminum alloy according to the processing method.

The deformed aluminum alloy can be further divided into a non-heat treatable reinforced aluminum alloy and a heat treatable reinforced aluminum alloy. Non-heat-treated reinforced aluminum alloy cannot improve the mechanical properties by heat treatment, and can only be strengthened by cold working deformation. It mainly includes high-purity aluminum, industrial high-purity aluminum, industrial pure aluminum and rust-proof aluminum. The heat-treatable reinforced aluminum alloy can be improved in mechanical properties by heat treatment such as quenching and aging, and can be classified into hard aluminum, wrought aluminum, super-hard aluminum, and special aluminum alloy. The aluminum alloy can be heat treated to obtain good mechanical properties, physical properties and corrosion resistance.

Cast aluminum alloy can be divided into aluminum silicon alloy , aluminum-copper alloy, aluminum-magnesium alloy and aluminum-zinc alloy according to chemical composition. Cast aluminum alloy is classified into four types according to the main elements other than aluminum in the composition: silicon, copper, magnesium and zinc.


Pure aluminum products

Pure aluminum products are divided into two categories: smelting and pressure processing. The former is represented by chemical composition Al, and the latter is represented by LG (aluminum, industrial). The aluminum sputtering target is a kind of pure aluminum product.

Pressure processing aluminum alloy

Aluminum alloy pressure processing products are divided into seven categories: rustproof (LF), hard (LY), forged (LD), superhard (LC), coated (LB), special (LT) and brazed (LQ). The state of the commonly used aluminum alloy material is three types of annealing (M igniter), hardening (Y), and hot rolling (R).

Aluminum sputtering target

The aluminum sputtering target is one of the sputtering targets used in the vacuum coating industry, and is therefore called aluminum sputtering target. The aluminum target is obtained after a series of processing of high-purity aluminum. It is available in a specific size and shape, which is mounted on a vacuum coater to form a film on the surface of the substrate by sputtering.

Please visit https://www.sputtertargets.net/ for more information.

Rotatable Sputtering Targets Merits and Weakness

Sputtering is a high-speed process where superfast ions hit a sputtering target and dislodge minuscule particles that in turn coat a thin film on substrates like architectural glass, LED televisions and computer displays.

Rotatable sputtering target, or rotatory target, is a commonly used target shape in magnetron sputtering. It is generally cylindrical, with a stationary magnet inside, and a slow magnetic field, which allows the sputtering rate to be uniform and the target utilization rate to be high. Rotating targets are commonly used for coating solar cells, architectural glass, automotive glass, semiconductors, and flat-panel TVs.

The main advantage of the rotatable target is the high utilization of the target, which means that the rotating target can solve the problem of low utilization of the planar target.

Rotatory Copper (Cu) Sputtering Target
Rotatory Copper (Cu) Sputtering Target

For a planar sputtering target, the target utilization of the normal cathode can reach 25%, and the special design of the magnet bypass with the target back can increase the target utilization to about 40%. Despite this, the utilization of planar targets is still not high. However, the utilization of cylindrical rotating targets is typically in the range of 75% to 90%, much higher than planar targets. However, when the rotating target is used for large-area coating, the uniformity of the surface of the film layer is poor and it is difficult to meet the requirements, which is the biggest disadvantage of the rotating target.

Materials Planar Rotatory
Metal Planar molybdenum target, planar copper target, planar titanium target, planar tungsten target, planar zirconia target


Rotatory molybdenum target, rotatory copper target, rotatory titanium target, rotatory tungsten target, rotatory zirconia target


Oxides Planar SiO2 Sputtering Target Rotatory ATO Sputtering Target, rotary Nb2Ox sputtering target, rotatory TiOx sputtering target, rotatory Al2O3 sputtering target
Alloy Planar Cr-Ta sputtering target, planar Ti-Al-Si sputtering target SnO2-Sb2O3 rotatory sputtering target

For more information, please visit https://www.sputtertargets.net/.

Sputtering Target Materials for Vacuum Thin Film Coating

The sputtering target is a key required material for vacuum film coating. It refers to a material that can ionize the surface by the current-binding magnetic field.

Almost all sputter coating equipment uses a powerful magnet to spiral the electrons to accelerate the ionization of the argon around the target, resulting in an increased likelihood of collision between the target and the argon ions, thereby increasing the sputtering rate.

Typically, most metal plating uses DC sputtering, while non-conductive ceramic materials use RF sputtering. The basic principle is that argon (Ar) ions are struck against the target surface by glow discharge in a vacuum, and cations in the plasma are accelerated as a sputter material to the surface of the negative electrode. The impact will cause the material of the target to fly out and deposit on the substrate to form a film.

Generally, the sputter coating process has several features:

(1)Many materials can be deposited into thin film materials by sputtering, including metals, alloys, insulators, and the like.

(2)Under appropriate conditions, different component target materials can be made into films of the same material.

(3)Oxides or other compounds of the target substance and gas molecules can be prepared by adding oxygen or other reactive gas to the discharge atmosphere.

(4)Highly accurate film can be obtained by controlling the magnitude of the input current and the length of the sputtering time.

(5)For large-area coatings, sputter deposition is definitely superior to other coating processes.

(6)In the vacuum vessel, the sputtered particles are not affected by gravity, and the positions of the target and the substrate can be freely aligned.

(7)The bond strength between the sputter-coated substrate and the film is 10 times or more the adhesive strength of a general evaporated deposited film. Furthermore, since the sputtered particles have high energy, the surface of the film is continuously diffused to obtain a hard and dense film. At the same time, high energy allows the substrate to obtain a crystalline film at a lower temperature.

(8)The nucleation density at the initial stage of film formation is high, and an extremely thin continuous film of 10 nm or less can be produced.

(9)Sputtering targets have a long service life and can be continuously produced over a long period of time.

(10)The sputtering target can be made into various shapes. By special design of the shape of the target, the sputtering process can be better controlled and the sputtering efficiency can be most effectively improved.

For more information, please visit https://www.sputtertargets.net/.

Pros and Cons of Ion Beam Sputtering


1 Ion beam sputtering relies on momentum exchange to make atoms and molecules of solid materials enter the gas phase. The average energy generated by sputtering is 10 eV, which is about 100 times higher than that of vacuum evaporation. After deposited on the surface of the substrate, these particles still have enough kinetic energy to migrate on the surface of the substrate, so that the film has good quality and is firmly bonded to the substrate.

2 Any material can be coated by ion beam sputtering, and even a high-melting material can be sputtered. For alloys and compound materials, it is easy to form a film having the same ratio as the composition of the sputtering target, and thus sputter coating is widely used.

3 The incident ions of the ion beam sputter coating are generally obtained by a gas discharge method, and the working pressure is between 10-2 Pa and 10 Pa. Sputtered ions often collide with gas molecules in the vacuum chamber before flying to the substrate, so the direction of motion randomly deviates from the original direction. Sputtering is generally ejected from a larger sputter target surface area and is, therefore, more uniform than that obtained by vacuum coating. For coating parts with grooves, steps, etc., the sputter coating can reduce the difference in film thickness caused by the cathode effect to a negligible extent. However, sputtering at higher pressures will result in more gas molecules in the film.

ion beam sputtering deposition

4 Sputtering can precisely focus and scan the ion beam, change the target material and substrate material while maintaining the characteristics of the ion beam, and independently control the ion beam energy and current. Since the energy of the ion beam, the beam size and the beam direction can be precisely controlled, and the sputtered atoms can directly deposit the film without collision, the ion beam sputtering method is suitable as a research method for thin film deposition.


The main disadvantage of ion beam sputtering is that the target area of the bombardment is too small and the deposition rate is generally low. What’s worse, ion beam sputter deposition is also not suitable for depositing a large-area film of uniform thickness. And the sputtering device is too complicated, and the equipment operating cost is high.

For high purity sputtering target inquiry, please visit Stanford Advanced Materials.

Introduction to the Process and Steps of Evaporation Coating

The basic process flow for evaporation coating is:

Preparation before coating→ vacuum→ ion bombardment→ baking→ premelting→ evaporation→ removing parts→ film surface treatment→ finished product

1. Preparation before coating

The process includes vacuum chamber coating part cleaning, evaporation source making and cleaning, installation of evaporation source and evaporation materials.

The amount of bonding between the film layer and the surface of substrate is an important indicator of product quality. It is determined by many factors, and the surface treatment before coating is one of the most basic factors. If there is grease on the surface of the coating part, adsorbing water, dust, etc., it will reduce the bonding force of the film layer and affect the surface roughness. Cleaning is generally done by several methods: chemical degreasing, electrostatic dedusting and primer application.

According to the requirements of the product and the material of the coating parts, selecting the appropriate evaporation material is the basic condition for obtaining a high-quality film layer. For different evaporation materials, the corresponding evaporation source and the evaporation method should be selected.

The basic principle of selecting metal evaporation materials is: good thermal stability and chemical stability, high mechanical strength, low internal stress, and certain toughness, good bonding with primer, high reflectivity, and small gas release in vacuum; the material source is wide, the price is low, and it has a corresponding evaporation source.

2. Vacuum step

Open the cooling water valve, adjust to the required water pressure, turn on the main power supply, close the atmospheric valve leading to the vacuum chamber, close the pipeline valve, start the mechanical pump power supply, and open the pre-vacuum valve; At this time, the vacuum chamber is evacuated using a diffusion pump or a mechanical pump, and baking, pre-melting, and evaporation are performed when the degree of vacuum reaches a certain value.

3. Ion bombardment

In the glow discharge, the ion bombardment electrons obtain a high speed, and the negative charge is rapidly generated around the substrate due to the large mobility of the electron. Under the action of the negative charge attraction, the positive ion bombards the surface of the coating part, and the substrate. There is energy exchange on the surface, and a chemical reaction occurs between the adsorption layer of the coating member and the active gas to achieve the effect of cleaning the surface.
The conditions of ion bombardment are that the residual gas pressure is stable at 0.13~13Pa, the voltage is 1.5~10kV, and the time is 5~60min.

4. Baking

It can accelerate the rapid escape of the gas adsorbed by the coating parts or the clamp, which is beneficial to improve the vacuum degree and the film bonding force. When baking, it should be noted that the non-metal baking temperature is lower than the hot deformation temperature of the coating part by 20~30 °C, and the metal baking is generally not more than 200 °C.

5. Pre-melting

This step can remove the low melting point impurities in the evaporation material and the gas adsorbed in the evaporation source and the evaporation material, which is favorable for the smooth progress of evaporation. The pre-melted vacuum is generally 6.6 x 10-3 Pa. For materials with high hygroscopicity, it should be pre-melted repeatedly. The overall requirement is that the vacuum does not drop as the evaporating material warms to the evaporating temperature.

6. Evaporation

Evaporation technology has a great impact on film quality. There are different requirements for general metals, special metals and compound evaporating pellets. For example, some metal particles need to be evaporated quickly, while others are not suitable. The heating method and the shape of the evaporation source should also be different depending on the evaporation material.

Please visit https://www.sputtertargets.net/by-evaporation-materials.html for more information.

Sputter Coating Advantages vs. Disadvantages

Sputter coating is the core thin film deposition process in the semiconductor, disk drive, CD and optics industries today.

When a suitable gas (usually argon) and a target material (usually metals) are used to form a glow discharge between the cathode and the anode, the sputtering target is bombarded to cause the atoms to be ejected from the target material——the process is referred to as “sputtering”; the atoms of the sputtering target will be deposited on a substrate, such as a silicon wafer, solar panel or optical device, and this process is known as sputter deposition.

Sputter deposition, as a relatively common physical vapor deposition (PVD) method, has its advantages, such as a wide range of deposition materials and high coating quality.

The table below details the advantages and disadvantages of sputter coating. It is provided by Stanford Advanced Materials and is for informational purposes only.

Advantages Disadvantages
(1) Able to deposit a wide variety of metals, insulators, alloys and composites.

(2) Replication of target composition in the deposited films.

(3) Capable of in-situ cleaning prior to film deposition by reversing the potential on the electrodes .

(4) Better film quality and step coverage than evaporation.

(5) This is partly because adatoms are more  energetic, and film is ‘densified’ by in-situ ion bombardment, and it is easier to heat up to high T than evaporation that is in vacuum.

(6) More reproducible deposition control – same deposition rate for same process parameters (not true for evaporation), so easy film thickness control via time.

(7) Can use large area targets for uniform thickness over large substrates.

(8) Sufficient target material for many depositions.

(9) No x-ray damage.

(1) Substrate damage due to ion bombardment or UV generated by plasma.

(2) Higher pressures 1 –100 mtorr ( < 10-5 torr in evaporation), more contaminations unless using ultra clean gasses and ultra clean targets.

(3) Deposition rate of some materials quite low.

(4) Some materials (e.g., organics) degrade due to ionic bombardment.

(5) Most of the energy incident on the target becomes heat, which must be removed.

For more information, please visit https://www.sputtertargets.net/sputtering-target-materials.html.

An Overview of Copper Sputtering Target

Copper sputtering targets, as part of vacuum coating materials, are widely applied in tool coating, optics coating, solar coating, and etc.  Copper targets can be put together with metallic copper because they are essentially the same–composed by Cu atoms.

Development of Copper

Copper is one of the earliest metals discovered by mankind and the first metal that humans began to use. Copper beads made of natural copper excavated by archaeologists in northern Iraq are supposed to have been more than 10,000 years old. Methods for refining copper from its ores were discovered around 5000BC and a 1000 or so years later it was being used in pottery in North Africa.

In modern industry, copper was widely used in the power and electronics industries. By the 1960s, copper used in these two industries accounted for 28%. By 1997, these two industries were still the main areas of copper consumption, accounting for Than 25%. Later, copper was widely used in electrical, light industry, machinery manufacturing, construction industry, transportation, and other fields. As far as America is concerned, copper is second only to aluminum in the consumption of non-ferrous materials. Copper has excellent performance and is easy to recycle and recycle. At present, there are already relatively complete recycled copper recycling systems in developed countries. For example, the output of recycled copper in the United States accounts for 60% of the total output, and Germany accounts for 80%.

Copper Sputtering Target Property

Copper is a chemical metal element with the symbol Cu. It is a soft, malleable, and ductile metal with very high thermal and electrical conductivity. A freshly exposed surface of pure copper has a pinkish-orange color. Copper is used as a conductor of heat and electricity, as a building material, and as a constituent of various metal alloys, such as sterling silver used in jewelry, cupronickel used to make marine hardware and coins, and constantan used in strain gauges and thermocouples for temperature measurement.

Material Type Copper
Symbol Cu
Color/Appearance Copper, Metallic
Melting Point 1,083 ℃
Density 8.96 g/cm3
Sputter DC
Type of Bond Indium, Elastomer
Comments Adhesion poor. Use interlayer (Cr). Evaporates using any source material.

From Metal Copper to Copper Sputter Target

The copper sputtering target is a kind of copper product made of the metal copper, and it is used in the sputter coating to produce copper thin film. Simply speaking, there are two methods to make copper sputtering target from metal copper.

Casting: melt the raw material of a certain distribution ratio, pour the alloy solution into a mold to form an ingot, and finally machine it to become a sputtering target. The method is smelted and cast in a vacuum.

Powder metallurgy: melt the raw material of a certain distribution ratio, cast it into an ingot and then pulverize it, isostatically press the powder, and then sintering it at a high temperature to finally form a target.


Powder metallurgy process
Powder metallurgy process

Basic Requirement of Copper SputterTarget

In general, when measuring whether the sputtering target meets the primary requirements, one would consider the following indicators:

Purity: Purity has a great influence on the performance of the film produced by sputter coating. Taking copper target as an example, the higher the purity is, the better the corrosion resistance and electrical and optical properties of the sputtered film are.

Impurity content: The impurities in the solid of the target material and the oxygen and water vapor in the stoma are the main pollution sources of the deposition film. Targets for different applications have different requirements of their impurity contents.

Density: The density of the target not only affects the sputtering rate but also affects the electrical and optical properties of the film. Thus, in order to reduce pores in the solids of the target and improve the properties of the sputtered film, the target is usually required to have a higher density.

Grain size and grain size distribution: For the same target, the sputtering rate of the fine-grained target is faster than that of the coarse-grained target; and the thickness of the target sputter-deposited film with a smaller difference in grain size (distributed uniformly) is more uniform.

Information provided by SAM Sputter Targets.