The indium tin oxide (ITO) transparent conductive film belongs to an N-type oxygen-deficient semiconductor material. It has low absorption of visible light and has high visible light transmittance, excellent infrared reflection performance and microwave attenuation performance in the mid-far infrared range. ITO transparent conductive film has become an important optical component in the field of optoelectronic devices due to its excellent photoelectric performance.
ITO materials have long been used as transparent conductive films in the form of single-layer films, but their average transmittance in the visible portion is very low, generally less than 90%, and the reflectance is high, affecting its display and electromagnetic shielding applications. If the transmittance in the visible light region is improved, the application of the ITO transparent conductive film will be more extensive.
The ITO film is usually made of the indium tin oxide sputtering target and the indium tin oxide evaporation material. The use of the ITO film as one of the antireflection film systems can greatly increase the transmittance of the transparent conductive film in the visible light portion, and solves the problem that the transparent conductive film is generally low in visible light transmittance. A multilayer anti-reflection film containing TTO material was prepared by a low-pressure reactive ion plating method, and a transparent conductive film having an average visible light transmittance of 95.83%, a maximum transmittance of 97.26%, and a sheet resistance of 13.2 to 24.6 Ω was obtained. The anti-reflection film largely alleviates the contradiction between the conductivity and the transparency of the transparent conductive film, and the ITO transparent conductive film has more useful practical value and application prospect in the field of application.
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